2N7081 Datasheet and Replacement
Type Designator: 2N7081
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO257
- MOSFET Cross-Reference Search
2N7081 Datasheet (PDF)
2n7081-220m-iso 2n7081.pdf
2N7081220MISOMECHANICAL DATADimensions in mm(inches)NCHANNELPOWER MOSFET4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)1.14 (0.045)VDSS 100V3.56 (0.140)Dia.3.81 (0.150)ID(cont) 11ARDS(on) 0.151 2 3FEATURES TO220 ISOLATED HERMETIC PACKAGE LOW RDS(ON)0.64 (0.025)Dia.0.89 (0.035) SIMPLE DRIVE REQUIREMENTS
Datasheet: 2N7073 , 2N7074 , 2N7075 , 2N7076 , 2N7077 , 2N7078 , 2N7079 , 2N7080 , 5N60 , 2N7082 , 2N7085 , 2N7086 , 2N7100 , 2N7101 , 2N7102 , 2N7103 , 2N7104 .
Keywords - 2N7081 MOSFET datasheet
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History: GSM3030 | IRF6612
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