CM18N20 Datasheet and Replacement
Type Designator: CM18N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO220A
CM18N20 substitution
CM18N20 Datasheet (PDF)
cm18n20.pdf
RC1N0M82 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 200V N-Channel VDMOS RoHS 12 3TO-220A 4
cm18n50p.pdf
RC1N0M85P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 121 2 33
cm18n50f.pdf
RCM18N50F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS
Datasheet: CM12N65 , CM12N65A , CM12N65AF , CM12N65F , CM13N50 , CM13N50F , CM140N04 , CM15N50 , IRF540N , CM18N50F , CM18N50P , 1D5N60 , CM1N60 , CM1N60C , CM1N60S , CM1N70 , CM20N50 .
History: BSZ0902NS | IPA086N10N3
Keywords - CM18N20 MOSFET datasheet
CM18N20 cross reference
CM18N20 equivalent finder
CM18N20 lookup
CM18N20 substitution
CM18N20 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: BSZ0902NS | IPA086N10N3
LIST
Last Update
MOSFET: AGM615MNA | AGM615MN | AGM615D | AGM614MNA | AGM614MN | AGM614MBP-M1 | AGM614MBP | AGM614D | AGM614A-G | AGM612S | AGM612MNA | AGM612MN | AGM612MBQ | AGM612MBP | AGM612D | AGM612AP
Popular searches
irfb7437 | tip32a | p75nf75 mosfet equivalent | irfpe50 | tip50 | transistor bc547 datasheet | bc109c | d331 transistor

