All MOSFET. CM18N50P Datasheet

 

CM18N50P Datasheet and Replacement


   Type Designator: CM18N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO3PB
 

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CM18N50P Datasheet (PDF)

 ..1. Size:124K  jdsemi
 cm18n50p.pdf pdf_icon

CM18N50P

RC1N0M85P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 121 2 33

 7.1. Size:146K  jdsemi
 cm18n50f.pdf pdf_icon

CM18N50P

RCM18N50F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS

 9.1. Size:122K  jdsemi
 cm18n20.pdf pdf_icon

CM18N50P

RC1N0M82 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 200V N-Channel VDMOS RoHS 12 3TO-220A 4

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NTD4813N | STD12N06L-1 | FDC655BN | BF965 | NTD4815N

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