1D5N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: 1D5N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 10 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 1.5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 8.3 Ohm
Package: TO92
1D5N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
1D5N60 Datasheet (PDF)
1.1. 1d5n60.pdf 
Size:121K _jdsemi
R 1D5N60 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途 主要用于电源适配器、线形放大 以及功率开关电路 2．主要特点 开关速度快 通态电阻小，输入电容小 3．封装外形
Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .
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