1D5N60 Specs and Replacement
Type Designator: 1D5N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 10 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.3 Ohm
Package: TO92
1D5N60 substitution
- MOSFET ⓘ Cross-Reference Search
1D5N60 datasheet
1d5n60.pdf
R 1D5N60 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2 3 ... See More ⇒
Detailed specifications: CM12N65F, CM13N50, CM13N50F, CM140N04, CM15N50, CM18N20, CM18N50F, CM18N50P, IRFP460, CM1N60, CM1N60C, CM1N60S, CM1N70, CM20N50, CM20N50F, CM20N50P, CM20N50PZ
Keywords - 1D5N60 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRLR8103 | 2N6845U | SRC60R045FB | SM6028NSKP | SPP80N06S2L-09 | JVC085T | 2SK1337
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