1D5N60 Datasheet and Replacement
Type Designator: 1D5N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 10 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.3 Ohm
Package: TO92
1D5N60 substitution
1D5N60 Datasheet (PDF)
1d5n60.pdf

R1D5N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2 3
Datasheet: CM12N65F , CM13N50 , CM13N50F , CM140N04 , CM15N50 , CM18N20 , CM18N50F , CM18N50P , IRF640 , CM1N60 , CM1N60C , CM1N60S , CM1N70 , CM20N50 , CM20N50F , CM20N50P , CM20N50PZ .
History: FQA70N15 | IXTV86N25T
Keywords - 1D5N60 MOSFET datasheet
1D5N60 cross reference
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History: FQA70N15 | IXTV86N25T



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