IRF620S Datasheet. Specs and Replacement

Type Designator: IRF620S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO263

  📄📄 Copy 

IRF620S substitution

- MOSFET ⓘ Cross-Reference Search

 

IRF620S datasheet

 ..1. Size:182K  international rectifier
irf620s.pdf pdf_icon

IRF620S

... See More ⇒

 ..2. Size:162K  international rectifier
irf620spbf.pdf pdf_icon

IRF620S

IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt Rating Qgs (nC) 3.0 Repetitive Avalanche Rated Qgd (nC) 7.9 Fast Switching Simple Drive Requirements Configuratio... See More ⇒

 8.1. Size:881K  1
irf620b irfs620b.pdf pdf_icon

IRF620S

... See More ⇒

 8.2. Size:886K  international rectifier
irf620.pdf pdf_icon

IRF620S

PD - 94870 IRF620PbF Lead-Free 12/5/03 Document Number 91027 www.vishay.com 1 IRF620PbF Document Number 91027 www.vishay.com 2 IRF620PbF Document Number 91027 www.vishay.com 3 IRF620PbF Document Number 91027 www.vishay.com 4 IRF620PbF Document Number 91027 www.vishay.com 5 IRF620PbF Document Number 91027 www.vishay.com 6 IRF620PbF TO-220AB Package Outline ... See More ⇒

Detailed specifications: IRF613, IRF614, IRF614A, IRF614S, IRF615, IRF620, IRF620A, IRF620FI, P55NF06, IRF621, IRF6215, IRF6215L, IRF6215S, IRF622, IRF623, IRF624, IRF624A

Keywords - IRF620S MOSFET specs

 IRF620S cross reference

 IRF620S equivalent finder

 IRF620S pdf lookup

 IRF620S substitution

 IRF620S replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility