IRF620S Datasheet and Replacement
Type Designator: IRF620S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 14(max) nC
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO263
IRF620S substitution
IRF620S Datasheet (PDF)
irf620spbf.pdf

IRF620S, SiHF620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200 Definition Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt RatingQgs (nC) 3.0 Repetitive Avalanche RatedQgd (nC) 7.9 Fast Switching Simple Drive RequirementsConfiguratio
irf620b irfs620b.pdf

November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
irf620.pdf

PD - 94870IRF620PbF Lead-Free12/5/03Document Number: 91027 www.vishay.com1IRF620PbFDocument Number: 91027 www.vishay.com2IRF620PbFDocument Number: 91027 www.vishay.com3IRF620PbFDocument Number: 91027 www.vishay.com4IRF620PbFDocument Number: 91027 www.vishay.com5IRF620PbFDocument Number: 91027 www.vishay.com6IRF620PbFTO-220AB Package Outline
Datasheet: IRF613 , IRF614 , IRF614A , IRF614S , IRF615 , IRF620 , IRF620A , IRF620FI , IRFB3607 , IRF621 , IRF6215 , IRF6215L , IRF6215S , IRF622 , IRF623 , IRF624 , IRF624A .
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