CM25N06 Datasheet and Replacement
Type Designator: CM25N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO220A
CM25N06 substitution
CM25N06 Datasheet (PDF)
cm25n06.pdf
RCM25N06 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 2 3 TO-220A 4
Datasheet: CM20N50 , CM20N50F , CM20N50P , CM20N50PZ , CM20N60 , CM20N60F , CM20N60P , CM220N04 , IRFP250N , CM2N60 , CM2N60C , CM2N60F , CM2N65C , CM2N65F , CM2N80C , CM2N80F , CM30N40PZ .
History: FMP13N60ES | FMP13N60E | SSF65R190S3 | AOTF15S60 | WMM07N65C4 | AOT210L | TSM414K34CS
Keywords - CM25N06 MOSFET datasheet
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History: FMP13N60ES | FMP13N60E | SSF65R190S3 | AOTF15S60 | WMM07N65C4 | AOT210L | TSM414K34CS
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