CM2N60 Datasheet and Replacement
Type Designator: CM2N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO220
CM2N60 substitution
CM2N60 Datasheet (PDF)
cm2n60.pdf
RCM2N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm2n60c to251.pdf
RCM2N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm2n60f.pdf
RCM2N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm2n60c.pdf
RCM2N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2LDP E C122
Datasheet: CM20N50F , CM20N50P , CM20N50PZ , CM20N60 , CM20N60F , CM20N60P , CM220N04 , CM25N06 , IRFP250N , CM2N60C , CM2N60F , CM2N65C , CM2N65F , CM2N80C , CM2N80F , CM30N40PZ , CM3N50C .
History: AONE36182 | 2SK2925L | FDB3652-F085 | AONE36132 | TPCS8009-H | IRF7779L2 | SL9926A
Keywords - CM2N60 MOSFET datasheet
CM2N60 cross reference
CM2N60 equivalent finder
CM2N60 lookup
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History: AONE36182 | 2SK2925L | FDB3652-F085 | AONE36132 | TPCS8009-H | IRF7779L2 | SL9926A
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