CM60N03C Datasheet and Replacement
Type Designator: CM60N03C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 43.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO251 TO252
CM60N03C substitution
CM60N03C Datasheet (PDF)
cm60n03c.pdf
RCM60N03C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 30V N-Channel Trench-MOS RoHS 1 D/CPMCD W2 TO-251 TO-252
cm60n03.pdf
RCM60N03 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 30V N-Channel Trench-MOS RoHS 1 D/CPMCD W2 3
Datasheet: CM4N65F , CM50N06 , CM55N06 , CM5N50 , CM5N50C , CM5N50F , CM5N80F , CM60N03 , RFP50N06 , CM6N40 , CM6N40C , CM6N60 , CM6N60F , CM7N60 , CM7N60F , CM7N65F , CM84N06 .
History: HUF76137S3S | AON6368 | FMC05N60E | FQU2N50B | DSG045N14N | 2SJ605-Z
Keywords - CM60N03C MOSFET datasheet
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History: HUF76137S3S | AON6368 | FMC05N60E | FQU2N50B | DSG045N14N | 2SJ605-Z
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