CM6N60 Datasheet and Replacement
Type Designator: CM6N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO220A
CM6N60 substitution
CM6N60 Datasheet (PDF)
cm6n60.pdf
RC66MN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE 2 3
cm6n60f.pdf
RC66FMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE 21 2 3
Datasheet: CM5N50 , CM5N50C , CM5N50F , CM5N80F , CM60N03 , CM60N03C , CM6N40 , CM6N40C , IRF530 , CM6N60F , CM7N60 , CM7N60F , CM7N65F , CM84N06 , CM8N06C , CM8N50 , CM8N50F .
Keywords - CM6N60 MOSFET datasheet
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