CM7N60F Datasheet and Replacement
Type Designator: CM7N60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO220FH
CM7N60F substitution
CM7N60F Datasheet (PDF)
cm7n60f.pdf
RCM7N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 12
cm7n60 to220a.pdf
RCM7N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 3
cm7n65f.pdf
RC76FMN5 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1LDE2 12
Datasheet: CM5N80F , CM60N03 , CM60N03C , CM6N40 , CM6N40C , CM6N60 , CM6N60F , CM7N60 , AO4407 , CM7N65F , CM84N06 , CM8N06C , CM8N50 , CM8N50F , CM8N60 , CM8N60F , CM8N65F .
History: HCT70R1K1 | RQA0008NXAQS | BLP04N10-B | S-LNTK2575LT1G | IRF7828PBF | AM2394NE | SHD217302A
Keywords - CM7N60F MOSFET datasheet
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History: HCT70R1K1 | RQA0008NXAQS | BLP04N10-B | S-LNTK2575LT1G | IRF7828PBF | AM2394NE | SHD217302A
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