CM8N50 Specs and Replacement
Type Designator: CM8N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220A
CM8N50 substitution
- MOSFET ⓘ Cross-Reference Search
CM8N50 datasheet
cm8n50f.pdf
R CM8N50F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 1 2 1 2 3... See More ⇒
Detailed specifications: CM6N40C, CM6N60, CM6N60F, CM7N60, CM7N60F, CM7N65F, CM84N06, CM8N06C, STP80NF70, CM8N50F, CM8N60, CM8N60F, CM8N65F, CM8N80, CM8N80F, CM9N20, CM9N90PZ
Keywords - CM8N50 MOSFET specs
CM8N50 cross reference
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