CM8N80 Datasheet and Replacement
Type Designator: CM8N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO220A
CM8N80 substitution
CM8N80 Datasheet (PDF)
cm8n80 to220a.pdf
RC88MN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 12 3
cm8n80f.pdf
RC88FMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 12 1 23
Datasheet: CM7N65F , CM84N06 , CM8N06C , CM8N50 , CM8N50F , CM8N60 , CM8N60F , CM8N65F , 2SK3568 , CM8N80F , CM9N20 , CM9N90PZ , CS100N08A8 , CS100N03B8 , CS100N03FB9 , CS10N50A8R , CS10N50FA9R .
History: KP743B1 | AFN6520S | IPB60R165CP | IRFS4010-7P | SSS1510 | TMD18N20Z | VBE1606
Keywords - CM8N80 MOSFET datasheet
CM8N80 cross reference
CM8N80 equivalent finder
CM8N80 lookup
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History: KP743B1 | AFN6520S | IPB60R165CP | IRFS4010-7P | SSS1510 | TMD18N20Z | VBE1606
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