CM9N90PZ Datasheet and Replacement
Type Designator: CM9N90PZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO3PB
CM9N90PZ substitution
CM9N90PZ Datasheet (PDF)
cm9n90pz.pdf
RC99PMN0Z www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 900V N-Channel VDMOS RoHS 1 USP 21
Datasheet: CM8N50 , CM8N50F , CM8N60 , CM8N60F , CM8N65F , CM8N80 , CM8N80F , CM9N20 , AO3401 , CS100N08A8 , CS100N03B8 , CS100N03FB9 , CS10N50A8R , CS10N50FA9R , IRLR9343TR , CS10N60A8R , HGE055NE4A .
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