All MOSFET. GN10N65A4 Datasheet

 

GN10N65A4 Datasheet and Replacement


   Type Designator: GN10N65A4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26.4 nS
   Cossⓘ - Output Capacitance: 94.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO252
 

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GN10N65A4 Datasheet (PDF)

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GN10N65A4

Silicon N-Channel Power MOSFET R GN10N65 A4 General Description VDSS 650 V GN10N65 A4, the silicon N-channel Enhanced ID 10 A PD(TC=25) 110 W VDMOSFETs, is obtained by the double-shield Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

Datasheet: CS10N50A8R , CS10N50FA9R , IRLR9343TR , CS10N60A8R , HGE055NE4A , CS10N60FA9R , VBA5638 , CS10N65A8R , IRF830 , CS10N65FA9R , VBA5311 , CS7N70A4R-G , VBA3638 , CS10N80AND , CS7N65FA9D , VBA3316 , VBA3222 .

History: NCE3025Q

Keywords - GN10N65A4 MOSFET datasheet

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