All MOSFET. GN10N65A4 Datasheet

 

GN10N65A4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: GN10N65A4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.3 nC
   trⓘ - Rise Time: 26.4 nS
   Cossⓘ - Output Capacitance: 94.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO252

 GN10N65A4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GN10N65A4 Datasheet (PDF)

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 gn10n65a4.pdf

GN10N65A4 GN10N65A4

Silicon N-Channel Power MOSFET R GN10N65 A4 General Description VDSS 650 V GN10N65 A4, the silicon N-channel Enhanced ID 10 A PD(TC=25) 110 W VDMOSFETs, is obtained by the double-shield Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SRT045N060H | 2SK2672 | 2SK2483

 

 
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