All MOSFET. VBA3638 Datasheet

 

VBA3638 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBA3638
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11.7 nC
   trⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SO8

 VBA3638 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBA3638 Datasheet (PDF)

 ..1. Size:725K  cn vbsemi
 vba3638.pdf

VBA3638 VBA3638

VBA3638www.VBsemi.comDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222G1G11N-Channel MOSFET N-Channel

 9.1. Size:690K  cn vbsemi
 vba3695.pdf

VBA3638 VBA3638

VBA3695www.VBsemi.comDual N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.095 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.100 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterSO-8 DualD2D1

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HM15N10K | STW13N80K5

 

 
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