VBA3638 PDF and Equivalents Search

 

VBA3638 Specs and Replacement

Type Designator: VBA3638

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SO8

VBA3638 substitution

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VBA3638 datasheet

 ..1. Size:725K  cn vbsemi
 vba3638.pdf pdf_icon

VBA3638

VBA3638 www.VBsemi.com Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G1 G 1 1 N-Channel MOSFET N-Channel... See More ⇒

 9.1. Size:690K  cn vbsemi
 vba3695.pdf pdf_icon

VBA3638

VBA3695 www.VBsemi.com Dual N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.095 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.100 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter SO-8 Dual D2 D1 ... See More ⇒

Detailed specifications: HGE055NE4A, CS10N60FA9R, VBA5638, CS10N65A8R, GN10N65A4, CS10N65FA9R, VBA5311, CS7N70A4R-G, AO3400A, CS10N80AND, CS7N65FA9D, VBA3316, VBA3222, CS12N60A8R, CS6N80ARR-G, VBA2658, CS12N60FA9R

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