All MOSFET. IRF623 Datasheet

 

IRF623 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF623

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO220

IRF623 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF623 Datasheet (PDF)

5.1. irf620.pdf Size:184K _st

IRF623
IRF623

IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF620 200 V < 0.8 ? 6 A IRF620FI 200 V < 0.8 ? 4 A TYPICAL R = 0.55 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 2 2 APPLICATIONS 1 1 HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) TO-220 ISOWATT220 MOTOR C

5.2. irf620-1-2-3-fi.pdf Size:508K _st2

IRF623
IRF623

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5.3. irf624b_irfs624b.pdf Size:874K _fairchild_semi

IRF623
IRF623

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.1A, 250V, RDS(on) = 1.1? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC) planar, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to • Fast switc

5.4. irf620b.pdf Size:875K _fairchild_semi

IRF623
IRF623

November 2001 IRF620B/IRFS620B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.0A, 200V, RDS(on) = 0.8? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to • Fast switchin

5.5. irf620s.pdf Size:182K _international_rectifier

IRF623
IRF623

5.6. irf6201pbf.pdf Size:247K _international_rectifier

IRF623
IRF623

PD - 97500A IRF6201PbF HEXFET® Power MOSFET VDS 20 V RDS(on) max 2.45 mΩ (@VGS = 4.5V) RDS(on) max 2.75 mΩ (@VGS = 2.5V) Qg (typical) 130 nC SO-8 ID 27 A (@TA = 25°C) Applications • OR-ing or hot-swap MOSFET • Battery operated DC motor inverter MOSFET • System/Load switch Features and Benefits Features Benefits Low RDSon (≤ 2.45mΩ @ Vgs = 4.5V) Lower

5.7. irf624spbf.pdf Size:1773K _international_rectifier

IRF623
IRF623

PD- 95985 IRF624SPbF • Lead-Free 12/21/04 Document Number: 91030 www.vishay.com 1 IRF624SPbF Document Number: 91030 www.vishay.com 2 IRF624SPbF Document Number: 91030 www.vishay.com 3 IRF624SPbF Document Number: 91030 www.vishay.com 4 IRF624SPbF Document Number: 91030 www.vishay.com 5 IRF624SPbF Document Number: 91030 www.vishay.com 6 IRF624SPbF Peak Diode Recovery dv/d

5.8. irf620spbf.pdf Size:1844K _international_rectifier

IRF623
IRF623

PD- 95748 IRF620SPbF • Lead-Free 8/23/04 Document Number: 91028 www.vishay.com 1 IRF620SPbF Document Number: 91028 www.vishay.com 2 IRF620SPbF Document Number: 91028 www.vishay.com 3 IRF620SPbF Document Number: 91028 www.vishay.com 4 IRF620SPbF Document Number: 91028 www.vishay.com 5 IRF620SPbF Document Number: 91028 www.vishay.com 6 IRF620SPbF Peak Diode Recovery dv/dt

5.9. irf6215s.pdf Size:182K _international_rectifier

IRF623
IRF623

PD - 91643 IRF6215S/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF6215S) VDSS = -150V Low-profile through-hole (IRF6215L) 175°C Operating Temperature RDS(on) = 0.29? Fast Switching G P-Channel ID = -13A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

5.10. irf620.pdf Size:886K _international_rectifier

IRF623
IRF623

PD - 94870 IRF620PbF • Lead-Free 12/5/03 Document Number: 91027 www.vishay.com 1 IRF620PbF Document Number: 91027 www.vishay.com 2 IRF620PbF Document Number: 91027 www.vishay.com 3 IRF620PbF Document Number: 91027 www.vishay.com 4 IRF620PbF Document Number: 91027 www.vishay.com 5 IRF620PbF Document Number: 91027 www.vishay.com 6 IRF620PbF TO-220AB Package Outline Dimen

5.11. irf624.pdf Size:275K _international_rectifier

IRF623
IRF623

PD - 95626 IRF624PbF • Lead-Free 8/3/04 Document Number: 91029 www.vishay.com 1 IRF624PbF Document Number: 91029 www.vishay.com 2 IRF624PbF Document Number: 91029 www.vishay.com 3 IRF624PbF Document Number: 91029 www.vishay.com 4 IRF624PbF Document Number: 91029 www.vishay.com 5 IRF624PbF Document Number: 91029 www.vishay.com 6 IRF624PbF Document Number: 91029 www.visha

5.12. irf624s.pdf Size:175K _international_rectifier

IRF623
IRF623

5.13. irf6216.pdf Size:103K _international_rectifier

IRF623
IRF623

PD - 94297 IRF6216 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Reset Switch for Active Clamp Reset ? -150V 0.240? ?@VGS =-10V -2.2A ? ? DC-DC converters Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 Effective COSS to Simplify Design (See 6 S D App. Note AN1001) 4 5 G D

5.14. irf6217.pdf Size:105K _international_rectifier

IRF623
IRF623

PD - 94359 IRF6217 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Reset Switch for Active Clamp Reset ? -150V 2.4? ?@VGS =-10V -0.7A ? ? DC to DC converters Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 Effective COSS to Simplify Design (See S D App. Note AN1001) 4 5 G D

5.15. irf6215.pdf Size:125K _international_rectifier

IRF623
IRF623

PD - 91479B IRF6215 HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -150V 175°C Operating Temperature Fast Switching RDS(on) = 0.29? P-Channel G Fully Avalanche Rated ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

5.16. irf624a.pdf Size:944K _samsung

IRF623
IRF623

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V ? Low RDS(ON) : 0.742 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.17. irf620a.pdf Size:931K _samsung

IRF623
IRF623

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

5.18. irf624_sihf624.pdf Size:196K _vishay

IRF623
IRF623

IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 250 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.1 RoHS* • Fast Switching Qg (Max.) (nC) 14 COMPLIANT • Ease of Paralleling Qgs (nC) 2.7 • Simple Drive Requirements Qgd (nC) 7.8 Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-22

Datasheet: IRF620A , IRF620FI , IRF620S , IRF621 , IRF6215 , IRF6215L , IRF6215S , IRF622 , 2N7002 , IRF624 , IRF624A , IRF624S , IRF625 , IRF630 , IRF630A , IRF630FI , IRF630S .

 


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