IRF623 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF623
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 60(max) ns
Cossⓘ - Выходная емкость: 300(max) pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
Тип корпуса: TO220
IRF623 Datasheet (PDF)
irfs624b irf624b.pdf
November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to
irf620b irfs620b.pdf
November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
irf6216pbf.pdf
SMPS MOSFETPD - 95293IRF6216PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp ResetDC-DC converters -150V 0.240W@VGS =-10V -2.2Al Lead-FreeBenefitsl Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3Effective COSS to Simplify Design (See 6S DApp. Note AN1001)4
irf6218spbf.pdf
PD - 96181IRF6218SPbFSMPS MOSFETIRF6218LPbFHEXFET Power MOSFETApplicationsl Reset Switch for Active ClampVDSS RDS(on) max IDReset DC-DC converters150m @VGS = -10V -27A-150VBenefitsDl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (SeeGApp. Note AN1001)D2Pak TO-262l Fully Cha
irf6215s.pdf
PD - 91643IRF6215S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF6215S)VDSS = -150V Low-profile through-hole (IRF6215L) 175C Operating TemperatureRDS(on) = 0.29 Fast SwitchingG P-ChannelID = -13A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve
irf6218l.pdf
PD - 95863AIRF6218SSMPS MOSFETIRF6218LHEXFET Power MOSFETApplicationsl Reset Switch for Active ClampVDSS RDS(on) max IDReset DC-DC converters150m @VGS = -10V -27A-150VBenefitsDl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (SeeGApp. Note AN1001)TO-262D2Pakl Fully Charact
irf620spbf.pdf
IRF620S, SiHF620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200 Definition Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt RatingQgs (nC) 3.0 Repetitive Avalanche RatedQgd (nC) 7.9 Fast Switching Simple Drive RequirementsConfiguratio
auirf6215s.pdf
AUTOMOTIVE GRADEAUIRF6215SFeatures HEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance DVDSS -150Vl P-Channell Dynamic dV/dT RatingG RDS(on) max. 0.29l 175C Operating TemperatureSID -13Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliant Dl Automotive Qualified *DescriptionSSpec
irf6215pbf.pdf
PD - 94817IRF6215PbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = -150V Fast Switching P-ChannelRDS(on) = 0.29 Fully Avalanche RatedG Lead-FreeID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe
irf620.pdf
PD - 94870IRF620PbF Lead-Free12/5/03Document Number: 91027 www.vishay.com1IRF620PbFDocument Number: 91027 www.vishay.com2IRF620PbFDocument Number: 91027 www.vishay.com3IRF620PbFDocument Number: 91027 www.vishay.com4IRF620PbFDocument Number: 91027 www.vishay.com5IRF620PbFDocument Number: 91027 www.vishay.com6IRF620PbFTO-220AB Package Outline
irf6216.pdf
PD - 94297IRF6216SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Reset Switch for Active Clamp Reset-150V 0.240@VGS =-10V -2.2ADC-DC convertersBenefits Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S D Fully Characterized Capacitance Including3Effective COSS to Simplify Design (See 6S DApp. Note AN1001
irf624spbf.pdf
PD- 95985IRF624SPbF Lead-Free12/21/04Document Number: 91030 www.vishay.com1IRF624SPbFDocument Number: 91030 www.vishay.com2IRF624SPbFDocument Number: 91030 www.vishay.com3IRF624SPbFDocument Number: 91030 www.vishay.com4IRF624SPbFDocument Number: 91030 www.vishay.com5IRF624SPbFDocument Number: 91030 www.vishay.com6IRF624SPbFPeak Diode Recovery
irf6215.pdf
PD - 91479BIRF6215HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.29 P-ChannelG Fully Avalanche RatedID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area
auirf6218l auirf6218s.pdf
AUTOMOTIVE GRADEAUIRF6218SAUIRF6218LFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS -150Vl P-Channell Dynamic dV/dT RatingRDS(on) max 150ml 175C Operating TemperatureGl Fast SwitchingS ID -27Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified *D
irf6216pbf-1.pdf
IRF6216PbF-1HEXFET Power MOSFETVDS -150 VA1 8S DRDS(on) max 0.24 2 7S D(@V = -10V)GSQg (typical) 33 nC 3 6S DID 4 5-2.2 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environme
irf624.pdf
PD - 95626IRF624PbF Lead-Free8/3/04Document Number: 91029 www.vishay.com1IRF624PbFDocument Number: 91029 www.vishay.com2IRF624PbFDocument Number: 91029 www.vishay.com3IRF624PbFDocument Number: 91029 www.vishay.com4IRF624PbFDocument Number: 91029 www.vishay.com5IRF624PbFDocument Number: 91029 www.vishay.com6IRF624PbFDocument Number: 91029 www.
irf6201pbf.pdf
PD - 97500AIRF6201PbFHEXFET Power MOSFETVDS20 VRDS(on) max 2.45 m (@VGS = 4.5V)RDS(on) max 2.75 m(@VGS = 2.5V)Qg (typical)130 nC SO-8ID 27 A(@TA = 25C)Applications OR-ing or hot-swap MOSFET Battery operated DC motor inverter MOSFET System/Load switchFeatures and BenefitsFeatures BenefitsLow RDSon ( 2.45m @ Vgs = 4.5V) Lower
irf620b.pdf
November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
irf620pbf.pdf
IRF620, SiHF620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 7.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irf6217.pdf
PD - 94359IRF6217SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Reset Switch for Active Clamp Reset-150V 2.4@VGS =-10V -0.7ADC to DC convertersBenefits Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S D Fully Characterized Capacitance Including3 6Effective COSS to Simplify Design (SeeS DApp. Note AN100
irf6217pbf-1.pdf
IRF6217PbF-1HEXFET Power MOSFETVDS -150 VA1 8S DRDS(on) max 2.4 2 7S D(@V = -10V)GSQg (typical) 6 nC 3 6S DID 4 5-0.7 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environment
irf6218pbf.pdf
PD -95441IRF6218PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp150m @VGS = -10V -27A-150VReset DC-DC convertersl Lead-FreeDBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingGEffective COSS to Simplify Design (SeeApp. Note AN1001)TO-220ABSl Fully Charac
irf6217pbf.pdf
PD - 95252IRF6217PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp Reset-150V 2.4W@VGS =-10V -0.7ADC to DC convertersl Lead-FreeBenefitsl Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6Effective COSS to Simplify Design (SeeS DApp. Note AN1001)
irf6215lpbf irf6215spbf.pdf
PD - 95132IRF6215S/LPbF Lead-Freewww.irf.com 14/21/05IRF6215S/LPbF2 www.irf.comIRF6215S/LPbFwww.irf.com 3IRF6215S/LPbF4 www.irf.comIRF6215S/LPbFwww.irf.com 5IRF6215S/LPbF6 www.irf.comIRF6215S/LPbFwww.irf.com 7IRF6215S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNAT IONALAS S
irf620.pdf
IRF620IRF620FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF620 200 V
irf624b irfs624b.pdf
November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to
irf620b.pdf
November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
irf624a.pdf
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.742 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val
irf620a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
irf624 sihf624.pdf
IRF624, SiHF624Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 2.7 Simple Drive RequirementsQgd (nC) 7.8Configuration Single Compliant to RoHS Directive 2002/95/ECDDE
irf624pbf sihf624.pdf
IRF624, SiHF624Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 2.7 Simple Drive RequirementsQgd (nC) 7.8Configuration Single Compliant to RoHS Directive 2002/95/ECDDE
irf624spbf sihf624s.pdf
IRF624S, SiHF624SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 1.1 Available in Tape and ReelQg (Max.) (nC) 14 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of Paralleling Simple Drive R
irf620 sihf620.pdf
IRF620, SiHF620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 7.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irf6218spbf.pdf
SMPS MOSFET IRF6218SPbF HEXFET Power MOSFET Applications VDSS RDS(on) (max) ID Reset Switch for Active Clamp Reset DC-DC converters - 150V 150m@ VGS = -10V -27A Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) S Fully Characterized
auirf6215.pdf
PD - 97564AUTOMOTIVE GRADEAUIRF6215Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Low On-Resistancel P-Channel DV(BR)DSS-150Vl Dynamic dv/dt RatingRDS(on) max.0.29l 175C Operating TemperatureGl Fast SwitchingID-13ASl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive QualifiedDD
auirf6215s.pdf
AUTOMOTIVE GRADE AUIRF6215S HEXFET Power MOSFET Features Advanced Planar Technology VDSS -150V Low On-Resistance P-Channel MOSFET RDS(on) max. 0.29 Dynamic dv/dt Rating 175C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automo
irf6215pbf.pdf
PD - 94817IRF6215PbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = -150V Fast Switching P-ChannelRDS(on) = 0.29 Fully Avalanche RatedG Lead-FreeID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe
irf6215spbf irf6215lpbf.pdf
PD - 95132IRF6215S/LPbF Lead-Freewww.irf.com 14/21/05IRF6215S/LPbF2 www.irf.comIRF6215S/LPbFwww.irf.com 3IRF6215S/LPbF4 www.irf.comIRF6215S/LPbFwww.irf.com 5IRF6215S/LPbF6 www.irf.comIRF6215S/LPbFwww.irf.com 7IRF6215S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNAT IONALAS S
irf6216pbf-1.pdf
IRF6216PbF-1HEXFET Power MOSFETVDS -150 VA1 8S DRDS(on) max 0.24 2 7S D(@V = -10V)GSQg (typical) 33 nC 3 6S DID 4 5-2.2 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environme
irf6218pbf.pdf
PD -95441IRF6218PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp150m @VGS = -10V -27A-150VReset DC-DC convertersl Lead-FreeDBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingGEffective COSS to Simplify Design (SeeApp. Note AN1001)TO-220ABSl Fully Charac
irf6217pbf.pdf
PD - 95252IRF6217PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp Reset-150V 2.4W@VGS =-10V -0.7ADC to DC convertersl Lead-FreeBenefitsl Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6Effective COSS to Simplify Design (SeeS DApp. Note AN1001)
irf6218.pdf
isc P-Channel MOSFET Transistor IRF6218,IIRF6218FEATURESStatic drain-source on-resistance:RDS(on)0.15Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONReset switch for active clampReset DC-DC convertersLow gate to drain charge to reduce switching lossesABSOLUTE MAXIMUM
Другие MOSFET... IRF620A , IRF620FI , IRF620S , IRF621 , IRF6215 , IRF6215L , IRF6215S , IRF622 , IRFB3607 , IRF624 , IRF624A , IRF624S , IRF625 , IRF630 , IRF630A , IRF630FI , IRF630S .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F