VBA2658 MOSFET Datasheet: P-Ch, 60V, 8A. Full specification with pinout and replacement list

VBA2658 Specs and Replacement

Type Designator: VBA2658

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 334 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0612 Ohm

Package: SO8

VBA2658 substitution

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VBA2658 datasheet

..1. Size:1224K cn vbsemi
vba2658.pdf pdf_icon

VBA2658 www.VBsemi.com P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 100 % Rg and UIS tested RDS(on) ( ) at VGS = -10 V 0.0480 RDS(on) ( ) at VGS = -4.5 V 0.0612 ID (A) per leg -8 S SO-8 S 1 8 D G S D 2 7 S 3 6 D G D 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted... See More ⇒

9.1. Size:684K cn vbsemi
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VBA2625 www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.0195 at VGS = - 10 V - 10 APPLICATIONS - 60 76 nC 0.0250 at VGS = - 4.5 V - 9 Load Switch S SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, un... See More ⇒

Detailed specifications: CS7N70A4R-G, VBA3638, CS10N80AND, CS7N65FA9D, VBA3316, VBA3222, CS12N60A8R, CS6N80ARR-G, IRF830, CS12N60FA9R, VBA2333, CS12N65A8R, CS5N65FA9R, CS12N65FA9R, CS12N70A8H, CS13N50A8D, VBA2311