All MOSFET. VBA2658 Datasheet

 

VBA2658 Datasheet and Replacement


   Type Designator: VBA2658
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 334 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0612 Ohm
   Package: SO8
 

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VBA2658 Datasheet (PDF)

 ..1. Size:1224K  cn vbsemi
 vba2658.pdf pdf_icon

VBA2658

VBA2658www.VBsemi.comP-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.0480RDS(on) () at VGS = -4.5 V 0.0612ID (A) per leg -8SSO-8S1 8 DGS D2 7S3 6 DG D4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted

 9.1. Size:684K  cn vbsemi
 vba2625.pdf pdf_icon

VBA2658

VBA2625www.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.0195 at VGS = - 10 V - 10APPLICATIONS- 60 76 nC0.0250 at VGS = - 4.5 V - 9 Load SwitchSSO-8SD1 8GSD2 7SD3 6GD4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, un

Datasheet: CS7N70A4R-G , VBA3638 , CS10N80AND , CS7N65FA9D , VBA3316 , VBA3222 , CS12N60A8R , CS6N80ARR-G , IRF1405 , CS12N60FA9R , VBA2333 , CS12N65A8R , CS5N65FA9R , CS12N65FA9R , CS12N70A8H , CS13N50A8D , VBA2311 .

History: 2SK1952 | APT47N60BCFG | DHE85N08 | SSM3K335R | CS50N06P | AO3418 | NCV8408

Keywords - VBA2658 MOSFET datasheet

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