IRF624 Datasheet. Specs and Replacement
Type Designator: IRF624 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 77 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO220AB
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IRF624 substitution
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IRF624 datasheet
irf624.pdf
PD - 95626 IRF624PbF Lead-Free 8/3/04 Document Number 91029 www.vishay.com 1 IRF624PbF Document Number 91029 www.vishay.com 2 IRF624PbF Document Number 91029 www.vishay.com 3 IRF624PbF Document Number 91029 www.vishay.com 4 IRF624PbF Document Number 91029 www.vishay.com 5 IRF624PbF Document Number 91029 www.vishay.com 6 IRF624PbF Document Number 91029 www.... See More ⇒
irf624 sihf624.pdf
IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 2.7 Simple Drive Requirements Qgd (nC) 7.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D DE... See More ⇒
irf624pbf sihf624.pdf
IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 2.7 Simple Drive Requirements Qgd (nC) 7.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D DE... See More ⇒
Detailed specifications: IRF620FI, IRF620S, IRF621, IRF6215, IRF6215L, IRF6215S, IRF622, IRF623, RFP50N06, IRF624A, IRF624S, IRF625, IRF630, IRF630A, IRF630FI, IRF630S, IRF631
Keywords - IRF624 MOSFET specs
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