All MOSFET. IRF624A Datasheet

 

IRF624A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF624A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 49 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Drain Current |Id|: 4.1 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 335 pF

Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm

Package: TO220

IRF624A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF624A Datasheet (PDF)

0.1. irf624a.pdf Size:944K _samsung

IRF624A
IRF624A

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.742 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

8.1. irfs624b irf624b.pdf Size:875K _1

IRF624A
IRF624A

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to

8.2. irf624b irfs624b.pdf Size:874K _fairchild_semi

IRF624A
IRF624A

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to

 8.3. irf624spbf.pdf Size:1773K _international_rectifier

IRF624A
IRF624A

PD- 95985IRF624SPbF Lead-Free12/21/04Document Number: 91030 www.vishay.com1IRF624SPbFDocument Number: 91030 www.vishay.com2IRF624SPbFDocument Number: 91030 www.vishay.com3IRF624SPbFDocument Number: 91030 www.vishay.com4IRF624SPbFDocument Number: 91030 www.vishay.com5IRF624SPbFDocument Number: 91030 www.vishay.com6IRF624SPbFPeak Diode Recovery

8.4. irf624.pdf Size:275K _international_rectifier

IRF624A
IRF624A

PD - 95626IRF624PbF Lead-Free8/3/04Document Number: 91029 www.vishay.com1IRF624PbFDocument Number: 91029 www.vishay.com2IRF624PbFDocument Number: 91029 www.vishay.com3IRF624PbFDocument Number: 91029 www.vishay.com4IRF624PbFDocument Number: 91029 www.vishay.com5IRF624PbFDocument Number: 91029 www.vishay.com6IRF624PbFDocument Number: 91029 www.

 8.5. irf624s.pdf Size:175K _international_rectifier

IRF624A
IRF624A

8.6. irf624 sihf624.pdf Size:196K _vishay

IRF624A
IRF624A

IRF624, SiHF624Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 2.7 Simple Drive RequirementsQgd (nC) 7.8Configuration Single Compliant to RoHS Directive 2002/95/ECDDE

8.7. irf624pbf sihf624.pdf Size:196K _vishay

IRF624A
IRF624A

IRF624, SiHF624Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 2.7 Simple Drive RequirementsQgd (nC) 7.8Configuration Single Compliant to RoHS Directive 2002/95/ECDDE

8.8. irf624spbf sihf624s.pdf Size:197K _vishay

IRF624A
IRF624A

IRF624S, SiHF624SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 1.1 Available in Tape and ReelQg (Max.) (nC) 14 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of Paralleling Simple Drive R

Datasheet: IRF620S , IRF621 , IRF6215 , IRF6215L , IRF6215S , IRF622 , IRF623 , IRF624 , STP75NF75 , IRF624S , IRF625 , IRF630 , IRF630A , IRF630FI , IRF630S , IRF631 , IRF632 .

 

 
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