All MOSFET. IRF624A Datasheet

 

IRF624A Datasheet and Replacement


   Type Designator: IRF624A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220
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IRF624A Datasheet (PDF)

 ..1. Size:944K  samsung
 irf624a.pdf pdf_icon

IRF624A

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.742 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

 8.1. Size:300K  1
 irf624 irf625.pdf pdf_icon

IRF624A

 8.2. Size:875K  1
 irfs624b irf624b.pdf pdf_icon

IRF624A

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to

 8.3. Size:175K  international rectifier
 irf624s.pdf pdf_icon

IRF624A

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Datasheet: IRF620S , IRF621 , IRF6215 , IRF6215L , IRF6215S , IRF622 , IRF623 , IRF624 , IRF530 , IRF624S , IRF625 , IRF630 , IRF630A , IRF630FI , IRF630S , IRF631 , IRF632 .

History: BSZ035N03LSG | SVF9N90F

Keywords - IRF624A MOSFET datasheet

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