All MOSFET. CS15N50FA9R Datasheet

 

CS15N50FA9R Datasheet and Replacement


   Type Designator: CS15N50FA9R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220F
 

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CS15N50FA9R Datasheet (PDF)

 ..1. Size:231K  wuxi china
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CS15N50FA9R

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 6.1. Size:231K  crhj
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CS15N50FA9R

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 6.2. Size:403K  convert
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CS15N50FA9R

nvertSuzhou Convert Semiconductor Co ., Ltd.CS15N50F,CS15N50P500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS15N50F TO-220F CS15N50FCS

 7.1. Size:229K  crhj
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CS15N50FA9R

Silicon N-Channel Power MOSFET R CS15N50 A8R General Description VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Datasheet: VBA2311 , CS13N50A8R , CS13N50FA9D , CS5N60FA9HD , CS13N50FA9R , CS5N60A8H , VBA2216 , CS15N50A8R , IRF3205 , VBA1328 , CS16N60FA9H , VBA1104N , VBA1158N , VBA1101M , CS5N60A4H , CS55N06A4 , VB2355 .

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