Справочник MOSFET. CS15N50FA9R

 

CS15N50FA9R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS15N50FA9R
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 235 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для CS15N50FA9R

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS15N50FA9R Datasheet (PDF)

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CS15N50FA9R

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 6.1. Size:231K  crhj
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CS15N50FA9R

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 6.2. Size:403K  convert
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CS15N50FA9R

nvertSuzhou Convert Semiconductor Co ., Ltd.CS15N50F,CS15N50P500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS15N50F TO-220F CS15N50FCS

 7.1. Size:229K  crhj
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CS15N50FA9R

Silicon N-Channel Power MOSFET R CS15N50 A8R General Description VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Другие MOSFET... VBA2311 , CS13N50A8R , CS13N50FA9D , CS5N60FA9HD , CS13N50FA9R , CS5N60A8H , VBA2216 , CS15N50A8R , IRF3205 , VBA1328 , CS16N60FA9H , VBA1104N , VBA1158N , VBA1101M , CS5N60A4H , CS55N06A4 , VB2355 .

History: AP2530AGY | BLP02N06-Q | INK0003AM1 | SI1012R | BLS6G2731-6G | 2SK3274L | SIHFP048R

 

 
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