All MOSFET. CS16N60FA9H Datasheet

 

CS16N60FA9H Datasheet and Replacement


   Type Designator: CS16N60FA9H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 18.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220F
 

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CS16N60FA9H Datasheet (PDF)

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 cs16n60f a9h.pdf pdf_icon

CS16N60FA9H

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 6.2. Size:776K  convert
 cs16n60f cs16n60p.pdf pdf_icon

CS16N60FA9H

nvertSuzhou Convert Semiconductor Co ., Ltd.CS16N60F,CS16N60P600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N60F TO-220F CS16N60FCS

 7.1. Size:426K  crhj
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CS16N60FA9H

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:426K  wuxi china
 cs16n60a8h.pdf pdf_icon

CS16N60FA9H

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

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Datasheet: CS13N50FA9D , CS5N60FA9HD , CS13N50FA9R , CS5N60A8H , VBA2216 , CS15N50A8R , CS15N50FA9R , VBA1328 , IRF840 , VBA1104N , VBA1158N , VBA1101M , CS5N60A4H , CS55N06A4 , VB2355 , VB264K , VB1695 .

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