VBA1104N PDF and Equivalents Search

 

VBA1104N Specs and Replacement

Type Designator: VBA1104N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SO8

VBA1104N substitution

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VBA1104N datasheet

 ..1. Size:436K  cn vbsemi
vba1104n.pdf pdf_icon

VBA1104N

VBA1104N www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO... See More ⇒

 8.1. Size:879K  cn vbsemi
vba1101m.pdf pdf_icon

VBA1104N

VBA1101M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) 100 % UIS Tested ID (A)d Qg (Typ.) 0.124 at VGS = 10 V 4.2 100 4.6 nC 0.128 at VGS = 4.5 V APPLICATIONS 3.9 High Frequency Boost Converter LED Backlight for LCD TV SO-8 D S D 1 8 S D 2 7 D S 3 6 G G D 4 5 Top View S N-Ch... See More ⇒

 8.2. Size:803K  cn vbsemi
vba1101n.pdf pdf_icon

VBA1104N

VBA1101N www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0090 at VGS = 10 V 16 Material categorization 100 0.0105 at VGS = 7.5 V 15.2 27.9 nC APPLICATIONS 0.0120 at VGS = 6.0 V 14 DC/DC Primary Side Switch Telecom/Server D Motor D... See More ⇒

 9.1. Size:128K  onsemi
nsvba114ydxv6t1g.pdf pdf_icon

VBA1104N

MUN5114DW1, NSBA114YDXV6, NSBA114YDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit... See More ⇒

Detailed specifications: CS5N60FA9HD, CS13N50FA9R, CS5N60A8H, VBA2216, CS15N50A8R, CS15N50FA9R, VBA1328, CS16N60FA9H, 20N60, VBA1158N, VBA1101M, CS5N60A4H, CS55N06A4, VB2355, VB264K, VB1695, VB2103K

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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