All MOSFET. VBA1101M Datasheet

 

VBA1101M MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBA1101M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.1 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SO8

 VBA1101M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBA1101M Datasheet (PDF)

 ..1. Size:879K  cn vbsemi
 vba1101m.pdf

VBA1101M VBA1101M

VBA1101Mwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) () 100 % UIS TestedID (A)d Qg (Typ.)0.124 at VGS = 10 V 4.2100 4.6 nC0.128 at VGS = 4.5 V APPLICATIONS3.9 High Frequency Boost Converter LED Backlight for LCD TVSO-8 DS D1 8S D2 7 DS 3 6 GG D4 5 Top ViewSN-Ch

 7.1. Size:803K  cn vbsemi
 vba1101n.pdf

VBA1101M VBA1101M

VBA1101Nwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0090 at VGS = 10 V 16 Material categorization:100 0.0105 at VGS = 7.5 V 15.2 27.9 nCAPPLICATIONS0.0120 at VGS = 6.0 V 14 DC/DC Primary Side Switch Telecom/ServerD Motor D

 8.1. Size:436K  cn vbsemi
 vba1104n.pdf

VBA1101M VBA1101M

VBA1104Nwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO

 9.1. Size:128K  onsemi
 nsvba114ydxv6t1g.pdf

VBA1101M VBA1101M

MUN5114DW1,NSBA114YDXV6,NSBA114YDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

 9.2. Size:89K  onsemi
 nsvba114edxv6t1g.pdf

VBA1101M VBA1101M

MUN5111DW1,NSBA114EDXV6,NSBA114EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 9.3. Size:469K  cn vbsemi
 vba1158n.pdf

VBA1101M VBA1101M

VBA1158Nwww.VBsemi.comN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRFB9N30APBF

 

 
Back to Top