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VB1695 Specs and Replacement

Type Designator: VB1695

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.09 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT23

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VB1695 datasheet

 ..1. Size:469K  cn vbsemi
 vb1695.pdf pdf_icon

VB1695

VB1695 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G 1 ... See More ⇒

Detailed specifications: CS16N60FA9H, VBA1104N, VBA1158N, VBA1101M, CS5N60A4H, CS55N06A4, VB2355, VB264K, IRF1404, VB2103K, SI2318CDS-T1-GE3, SI2318DS-T1-GE3, SI2319CDS-T1-GE3, SI2319DS-T1-GE3, SI2323CDS-T1-GE3, SI2323DDS-T1-GE3, SI2323DS-T1

Keywords - VB1695 MOSFET specs

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