All MOSFET. VB1695 Datasheet

 

VB1695 Datasheet and Replacement


   Type Designator: VB1695
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.09 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT23
 

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VB1695 Datasheet (PDF)

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VB1695

VB1695www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

Datasheet: CS16N60FA9H , VBA1104N , VBA1158N , VBA1101M , CS5N60A4H , CS55N06A4 , VB2355 , VB264K , IRF1404 , VB2103K , SI2318CDS-T1-GE3 , SI2318DS-T1-GE3 , SI2319CDS-T1-GE3 , SI2319DS-T1-GE3 , SI2323CDS-T1-GE3 , SI2323DDS-T1-GE3 , SI2323DS-T1 .

History: MMBF4392 | HIRF730F | HYG060P04LQ1V | INK0102AU1 | IXTQ120N20P | NP80N04NLG | KF7N50D

Keywords - VB1695 MOSFET datasheet

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