CS4N70FA9R PDF and Equivalents Search

 

CS4N70FA9R Specs and Replacement

Type Designator: CS4N70FA9R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO220F

CS4N70FA9R substitution

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CS4N70FA9R datasheet

 ..1. Size:321K  wuxi china
cs4n70fa9r.pdf pdf_icon

CS4N70FA9R

Silicon N-Channel Power MOSFET R CS4N70F A9R General Description VDSS 700 V CS4N70F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.55 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 5.1. Size:930K  wuxi china
cs4n70fa9d.pdf pdf_icon

CS4N70FA9R

Silicon N-Channel Power MOSFET R CS4N70F A9D General Description VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 7.1. Size:2205K  jilin sino
jcs4n70v jcs4n70r jcs4n70mf jcs4n70s jcs4n70b jcs4n70c jcs4n70f.pdf pdf_icon

CS4N70FA9R

N R N-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 700 V Rdson-max 2.8 @Vgs=10V Qg-typ 16nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS T0-251N-S2 FEA... See More ⇒

 7.2. Size:2742K  jilin sino
jcs4n70v jcs4n70r jcs4n70mf jcs4n70c jcs4n70f jcs4n70b jcs4n70s.pdf pdf_icon

CS4N70FA9R

N R N-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A 700 V VDSS Rdson-max 2.8 Vgs=10V 16nC Qg-Typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge ... See More ⇒

Detailed specifications: SI2323DDS-T1-GE3, SI2323DS-T1, SI2338DS-T1-GE3, CS4N80FA9HD, VB2290, CS4N80A4HD-G, VB8338, CS4N80A3HD-G, IRFP250N, VBA1615, VBA1630, CS24N40FA9H, CS24N50ANHD, CS25N06B3, CS25N06B4, CS25N06B8, CS4N65FA9HD

Keywords - CS4N70FA9R MOSFET specs

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