CS4N70FA9R - аналоги, параметры транзистора - Справочник транзисторов

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..1. Size:321K wuxi china
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Silicon N-Channel Power MOSFET R CS4N70F A9R General Description VDSS 700 V CS4N70F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.55 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.1. Size:930K wuxi china
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Silicon N-Channel Power MOSFET R CS4N70F A9D General Description VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

7.1. Size:2205K jilin sino
jcs4n70v jcs4n70r jcs4n70mf jcs4n70s jcs4n70b jcs4n70c jcs4n70f.pdf pdf_icon

N R N-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 700 V Rdson-max 2.8 @Vgs=10V Qg-typ 16nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS T0-251N-S2 FEA

7.2. Size:2742K jilin sino
jcs4n70v jcs4n70r jcs4n70mf jcs4n70c jcs4n70f jcs4n70b jcs4n70s.pdf pdf_icon

N R N-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A 700 V VDSS Rdson-max 2.8 Vgs=10V 16nC Qg-Typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge