All MOSFET. VBA1615 Datasheet

 

VBA1615 Datasheet and Replacement


   Type Designator: VBA1615
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SO8
 

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VBA1615 Datasheet (PDF)

 ..1. Size:424K  cn vbsemi
 vba1615.pdf pdf_icon

VBA1615

VBA1615www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.012 at VGS = 10 V 12.660 10.5 nC Optimized for Low Side Synchronous0.015 at VGS = 4.5 V 11.6Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CC

 9.1. Size:418K  cn vbsemi
 vba1630.pdf pdf_icon

VBA1615

VBA1630www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL I

Datasheet: SI2323DS-T1 , SI2338DS-T1-GE3 , CS4N80FA9HD , VB2290 , CS4N80A4HD-G , VB8338 , CS4N80A3HD-G , CS4N70FA9R , IRF9540 , VBA1630 , CS24N40FA9H , CS24N50ANHD , CS25N06B3 , CS25N06B4 , CS25N06B8 , CS4N65FA9HD , CS4N65A3HD1-G .

History: WMN13N65EM | WMK030N06HG4 | WMO07N70C4 | MEM2301XG-N | WML05N105C2 | STD2NK90Z | SI2343CDS

Keywords - VBA1615 MOSFET datasheet

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