VBA1630 MOSFET Datasheet: N-Ch, 60V, 6.1A. Full specification with pinout and replacement list

VBA1630 Specs and Replacement

Type Designator: VBA1630

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SO8

VBA1630 substitution

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VBA1630 datasheet

..1. Size:418K cn vbsemi
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VBA1630 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCFL I... See More ⇒

9.1. Size:424K cn vbsemi
vba1615.pdf pdf_icon

VBA1615 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.012 at VGS = 10 V 12.6 60 10.5 nC Optimized for Low Side Synchronous 0.015 at VGS = 4.5 V 11.6 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CC... See More ⇒

Detailed specifications: SI2338DS-T1-GE3, CS4N80FA9HD, VB2290, CS4N80A4HD-G, VB8338, CS4N80A3HD-G, CS4N70FA9R, VBA1615, IRF9540, CS24N40FA9H, CS24N50ANHD, CS25N06B3, CS25N06B4, CS25N06B8, CS4N65FA9HD, CS4N65A3HD1-G, SI2369DS-T1