CS24N40FA9H Datasheet and Replacement
Type Designator: CS24N40FA9H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 322 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
Package: TO220F
CS24N40FA9H substitution
CS24N40FA9H Datasheet (PDF)
cs24n40f a9h.pdf
Silicon N-Channel Power MOSFET R CS24N40F A9H General Description VDSS 400 V CS24N40F A9H, the silicon N-channel Enhanced ID 24 A PD (TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs24n40 a8.pdf
Silicon N-Channel Power MOSFET R CS24N40 A8 General Description VDSS 400 V CS24N40 A8, the silicon N-channel Enhanced ID 24 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs24n40a8.pdf
Silicon N-Channel Power MOSFET R CS24N40 A8 General Description VDSS 400 V CS24N40 A8, the silicon N-channel Enhanced ID 24 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
Datasheet: CS4N80FA9HD , VB2290 , CS4N80A4HD-G , VB8338 , CS4N80A3HD-G , CS4N70FA9R , VBA1615 , VBA1630 , AON7408 , CS24N50ANHD , CS25N06B3 , CS25N06B4 , CS25N06B8 , CS4N65FA9HD , CS4N65A3HD1-G , SI2369DS-T1 , SI2399CDS-T1 .
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