CS24N40FA9H MOSFET Datasheet: N-Ch, 400V, 24A. Full specification with pinout and replacement list

CS24N40FA9H Specs and Replacement

Type Designator: CS24N40FA9H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 72 nS

Cossⓘ - Output Capacitance: 322 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm

Package: TO220F

CS24N40FA9H substitution

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CS24N40FA9H datasheet

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Silicon N-Channel Power MOSFET R CS24N40F A9H General Description VDSS 400 V CS24N40F A9H, the silicon N-channel Enhanced ID 24 A PD (TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

7.1. Size:344K crhj
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Silicon N-Channel Power MOSFET R CS24N40 A8 General Description VDSS 400 V CS24N40 A8, the silicon N-channel Enhanced ID 24 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

7.2. Size:344K wuxi china
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