CS4N65FA9HD
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS4N65FA9HD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14.5
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5
Ohm
Package:
TO220F
CS4N65FA9HD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS4N65FA9HD
Datasheet (PDF)
..1. Size:234K wuxi china
cs4n65fa9hd.pdf 
Silicon N-Channel Power MOSFET R CS4N65F A9HD General Description VDSS 650 V CS4N65F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
7.1. Size:831K jilin sino
jcs4n65vb jcs4n65rb jcs4n65cb jcs4n65fb.pdf
N RN-CHANNEL MOSFETJCS4N65B Package MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson 2.5 @Vgs=10V13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
7.2. Size:1447K jilin sino
jcs4n65f jcs4n65v jcs4n65r jcs4n65b jcs4n65m jcs4n65mf.pdf
R JCS4N65E JCS4N65E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_max 2.5 Vgs=10V Qg-typ 11.9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low gate
7.3. Size:779K jilin sino
jcs4n65f-c-r-v.pdf
N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS4N65C \ Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS RdsonVgs=10V 2.5 9nC Qg APPLICATIONS (u High frequency switching
7.6. Size:263K crhj
cs4n65f a9r.pdf
Silicon N-Channel Power MOSFET R CS4N65F A9R General Description VDSS 650 V CS4N65F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
7.7. Size:171K lzg
cs4n65f.pdf
BRF4N65(CS4N65F) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25
7.8. Size:703K convert
cs4n65f cs4n65p cs4n65u cs4n65d.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N65F,CS4N65P,CS4N65U,CS4N65D650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N65F TO-220F
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