SI3456DDV-T1 PDF and Equivalents Search

 

SI3456DDV-T1 Specs and Replacement

Type Designator: SI3456DDV-T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TSOP6

SI3456DDV-T1 substitution

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SI3456DDV-T1 datasheet

 ..1. Size:862K  cn vbsemi
 si3456ddv-t1.pdf pdf_icon

SI3456DDV-T1

SI3456DDV-T1 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC... See More ⇒

 5.1. Size:193K  vishay
 si3456ddv.pdf pdf_icon

SI3456DDV-T1

New Product Si3456DDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET 30 2.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 4.5 V 5.7 APPLICATIONS Load Switch HDD DC/DC Conve... See More ⇒

 6.1. Size:191K  vishay
 si3456dd.pdf pdf_icon

SI3456DDV-T1

New Product Si3456DDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET 30 2.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 4.5 V 5.7 APPLICATIONS Load Switch HDD DC/DC Conve... See More ⇒

 7.1. Size:65K  vishay
 si3456dv.pdf pdf_icon

SI3456DDV-T1

Si3456DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.045 @ VGS = 10 V 5.1 30 30 0.065 @ VGS = 4.5 V 4.3 (1, 2, 5, 6) D TSOP-6 Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering Information Si3456DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWIS... See More ⇒

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Detailed specifications: CS25N06B4, CS25N06B8, CS4N65FA9HD, CS4N65A3HD1-G, SI2369DS-T1, SI2399CDS-T1, CS460FA9H, SI3407DV-T1, SPP20N60C3, SI3460DV-T1, SI3477DV-T1-GE3, SI3585DV-T1, CS2N70A3R1-G, SDM9433, SDM9435A, SDM9926, CS2N80A3HY

Keywords - SI3456DDV-T1 MOSFET specs

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