CS2N70A3R1-G PDF and Equivalents Search

 

CS2N70A3R1-G Specs and Replacement

Type Designator: CS2N70A3R1-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm

Package: TO251L1

CS2N70A3R1-G substitution

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CS2N70A3R1-G datasheet

 ..1. Size:246K  wuxi china
 cs2n70a3r1-g.pdf pdf_icon

CS2N70A3R1-G

Silicon N-Channel Power MOSFET R CS2N70 A3R1-G General Description VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

 5.1. Size:248K  wuxi china
 cs2n70a3r.pdf pdf_icon

CS2N70A3R1-G

Silicon N-Channel Power MOSFET R CS2N70 A3R General Description VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 7.1. Size:234K  wuxi china
 cs2n70a6.pdf pdf_icon

CS2N70A3R1-G

Silicon N-Channel Power MOSFET R CS2N70 A6 General Description VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 7.2. Size:247K  wuxi china
 cs2n70a4.pdf pdf_icon

CS2N70A3R1-G

Silicon N-Channel Power MOSFET R CS2N70 A4 General Description VDSS 700 V CS2N70 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

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Detailed specifications: SI2369DS-T1, SI2399CDS-T1, CS460FA9H, SI3407DV-T1, SI3456DDV-T1, SI3460DV-T1, SI3477DV-T1-GE3, SI3585DV-T1, AON7410, SDM9433, SDM9435A, SDM9926, CS2N80A3HY, NP32N055I, CS45N06A4, SUD25N06-45L, CS3410B4

Keywords - CS2N70A3R1-G MOSFET specs

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