CS2N70A3R1-G - аналоги и даташиты транзистора

 

CS2N70A3R1-G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: CS2N70A3R1-G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 6.5 Ohm
   Тип корпуса: TO251L1
 

 Аналог (замена) для CS2N70A3R1-G

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS2N70A3R1-G Datasheet (PDF)

 ..1. Size:246K  wuxi china
 cs2n70a3r1-g.pdf pdf_icon

CS2N70A3R1-G

Silicon N-Channel Power MOSFET RCS2N70 A3R1-G General Description VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 5.1. Size:248K  wuxi china
 cs2n70a3r.pdf pdf_icon

CS2N70A3R1-G

Silicon N-Channel Power MOSFET R CS2N70 A3R General Description VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.1. Size:234K  wuxi china
 cs2n70a6.pdf pdf_icon

CS2N70A3R1-G

Silicon N-Channel Power MOSFET R CS2N70 A6 General Description VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.2. Size:247K  wuxi china
 cs2n70a4.pdf pdf_icon

CS2N70A3R1-G

Silicon N-Channel Power MOSFET R CS2N70 A4 General Description VDSS 700 V CS2N70 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SI2369DS-T1 , SI2399CDS-T1 , CS460FA9H , SI3407DV-T1 , SI3456DDV-T1 , SI3460DV-T1 , SI3477DV-T1-GE3 , SI3585DV-T1 , 5N60 , SDM9433 , SDM9435A , SDM9926 , CS2N80A3HY , NP32N055I , CS45N06A4 , SUD25N06-45L , CS3410B4 .

 

 
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