CS3410BR Datasheet. Specs and Replacement

Type Designator: CS3410BR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO262

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CS3410BR datasheet

 7.1. Size:247K  wuxi china
 cs3410b3.pdf pdf_icon

CS3410BR

Silicon N-Channel Power MOSFET R CS3410 B3 General Description VDSS 100 V CS3410 B3, the silicon N-channel Enhanced VDMOSFETs, is ID 17 A PD (TC=25 ) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

 8.1. Size:244K  crhj
 cs3410 b4.pdf pdf_icon

CS3410BR

Silicon N-Channel Power MOSFET R CS3410 B4 General Description VDSS 100 V CS3410 B4, the silicon N-channel Enhanced VDMOSFETs, ID 17 A PD (TC=25 ) 80 W is obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 8.2. Size:232K  crhj
 cs3410 br.pdf pdf_icon

CS3410BR

Silicon N-Channel Power MOSFET R CS3410 BR General Description VDSS 100 V CS3410 BR, the silicon N-channel Enhanced VDMOSFETs, ID 17 A PD (TC=25 ) 80 W is obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

 8.3. Size:247K  crhj
 cs3410 b3.pdf pdf_icon

CS3410BR

Silicon N-Channel Power MOSFET R CS3410 B3 General Description VDSS 100 V CS3410 B3, the silicon N-channel Enhanced VDMOSFETs, is ID 17 A PD (TC=25 ) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

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Detailed specifications: SDM9433, SDM9435A, SDM9926, CS2N80A3HY, NP32N055I, CS45N06A4, SUD25N06-45L, CS3410B4, AO4407A, RSS065N06, RSS090P03, CS3N40A23, CS3N40A3H, CS3N40A4H, CS3N50B3, ISL9N306AS3S, CS3N50B4

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