All MOSFET. CS3710_B8 Datasheet

 

CS3710_B8 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS3710_B8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 57 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 620 pF

Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm

Package: TO220AB

CS3710_B8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS3710_B8 Datasheet (PDF)

1.1. cs3710 b8.pdf Size:774K _crhj

CS3710_B8
CS3710_B8

Silicon N-Channel Power MOSFET R ○ CS3710 B8 General Description: VDSS 100 V CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, ID 57 A PD(TC=25℃) 200 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 14 mΩ the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

4.1. cs3710b8.pdf Size:971K _update_mosfet

CS3710_B8
CS3710_B8

Silicon N-Channel Power MOSFET R ○ CS3710 B8 General Description: VDSS 100 V CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, ID 57 A PD(TC=25℃) 200 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 14 mΩ the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

4.2. cs3710.pdf Size:110K _update_mosfet

CS3710_B8

CS3710 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 200 W 线性降低系数 1.3 W/℃ ID (VGS=10V,TC=25℃) 57 A 极 限 ID (VGS=10V,TC=100℃) 40 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.75 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 100 V RDS on) VGS=10V,ID=28A 0.023 Ω ( VGS

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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