CS3N80ARH Datasheet and Replacement
Type Designator: CS3N80ARH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO262
CS3N80ARH substitution
CS3N80ARH Datasheet (PDF)
cs3n80a8.pdf

Silicon N-Channel Power MOSFET R CS3N80 A8 General Description VDSS 800 V CS3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
cs3n80a4.pdf

Silicon N-Channel Power MOSFET R CS3N80 A4 General Description VDSS 800 V CS3N80 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs3n80a3.pdf

Silicon N-Channel Power MOSFET R CS3N80 A3 General Description VDSS 800 V CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
Datasheet: CS3N50B4 , VB2703K , VB3222 , VB4290 , VB5222 , CS3N90A3H1-G , RTR025N05T , RYU002N05T306 , 2N60 , NTD20N06T4 , NTD24N06LT4G , NTD25P03LG , NDS9945-NL , NCE6602 , NDF02N60ZG , CS3R50A4 , NTR4503NT1G .
History: SM2A06NSF
Keywords - CS3N80ARH MOSFET datasheet
CS3N80ARH cross reference
CS3N80ARH equivalent finder
CS3N80ARH lookup
CS3N80ARH substitution
CS3N80ARH replacement
History: SM2A06NSF



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