SI4463BDY-T1 MOSFET Datasheet: P-Ch, 20V, 8A. Full specification with pinout and replacement list

SI4463BDY-T1 Specs and Replacement

Type Designator: SI4463BDY-T1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1700 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SO8

SI4463BDY-T1 substitution

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SI4463BDY-T1 datasheet

..1. Size:886K cn vbsemi
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SI4463BDY-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typi... See More ⇒

5.1. Size:162K vishay
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Si4463BDY Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.011 at VGS = - 10 V - 13.7 TrenchFET Power MOSFETs 0.014 at VGS = - 4.5 V - 20 - 12.3 0.020 at VGS = - 2.5 V - 10.3 S SO-8 S 1 8 D G S D 2 7 3 6 SD G D 4 5 Top View D Ordering Information Si4... See More ⇒

5.2. Size:1321K kexin
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SMD Type MOSFET P-Channel MOSFET SI4463BDY (KI4463BDY) SOP-8 Features VDS (V) =-20V ID =-13.7 A (VGS =-10V) 1.50 0.15 RDS(ON) 11m (VGS =-10V) RDS(ON) 14m (VGS =-4.5V) RDS(ON) 20m (VGS =-2.5V) 5 Drain 1 Source 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate S G D Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Secs... See More ⇒

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