SI4463BDY-T1 - Даташиты. Аналоги. Основные параметры

SI4463BDY-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typi

Si4463BDY Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.011 at VGS = - 10 V - 13.7 TrenchFET Power MOSFETs 0.014 at VGS = - 4.5 V - 20 - 12.3 0.020 at VGS = - 2.5 V - 10.3 S SO-8 S 1 8 D G S D 2 7 3 6 SD G D 4 5 Top View D Ordering Information Si4

SMD Type MOSFET P-Channel MOSFET SI4463BDY (KI4463BDY) SOP-8 Features VDS (V) =-20V ID =-13.7 A (VGS =-10V) 1.50 0.15 RDS(ON) 11m (VGS =-10V) RDS(ON) 14m (VGS =-4.5V) RDS(ON) 20m (VGS =-2.5V) 5 Drain 1 Source 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate S G D Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Secs

Si4463BDY Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.011 at VGS = - 10 V - 13.7 TrenchFET Power MOSFETs 0.014 at VGS = - 4.5 V - 20 - 12.3 0.020 at VGS = - 2.5 V - 10.3 S SO-8 S 1 8 D G S D 2 7 3 6 SD G D 4 5 Top View D Ordering Information Si4