SP8K31-TB Datasheet and Replacement
Type Designator: SP8K31-TB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SO8
SP8K31-TB substitution
SP8K31-TB Datasheet (PDF)
sp8k31-tb.pdf

SP8K31-TBwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe
sp8k31fra.pdf

SP8K31FRASP8K31TransistorAEC-Q101 Qualified4V Drive Nch+Nch MOSFETSP8K31SP8K31FRA Dimensions (Unit : mm) Structure SOP8Silicon N-channel MOSFET Features1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). ApplicationsEach lead has same dimensionsSwitching Equivalent circuit Packaging dimensions (8) (7) (6) (5) (8) (7) (6) (5)Packa
sp8k33fra.pdf

SP8K33FRASP8K33Transistors AEC-Q101 Qualified4V Drive Nch+Nch MOSFETSP8K33FRASP8K33 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Inner circuit(8) (7) (6) (5
Datasheet: CS2N65A4 , CS4N60A4R , P2402CAG , CS25N06C4 , CS1N60C1HD , SI4463BDY-T1 , SI4465ADY-T1-E3 , CS4N60FA9R , 2N7002 , CS1N60A4H , SPN9971T252 , CS4N65A3R , NTZD3155CT2G , NUD3160LT , CS4N65A4R , NCE6005AS , NCE603S .
History: NCEA75H25 | MCAC40N10YA-TP
Keywords - SP8K31-TB MOSFET datasheet
SP8K31-TB cross reference
SP8K31-TB equivalent finder
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SP8K31-TB replacement
History: NCEA75H25 | MCAC40N10YA-TP



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