SP8K31-TB MOSFET. Datasheet pdf. Equivalent
Type Designator: SP8K31-TB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 11.7 nC
trⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SO8
SP8K31-TB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SP8K31-TB Datasheet (PDF)
sp8k31-tb.pdf
SP8K31-TBwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe
sp8k31fra.pdf
SP8K31FRASP8K31TransistorAEC-Q101 Qualified4V Drive Nch+Nch MOSFETSP8K31SP8K31FRA Dimensions (Unit : mm) Structure SOP8Silicon N-channel MOSFET Features1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). ApplicationsEach lead has same dimensionsSwitching Equivalent circuit Packaging dimensions (8) (7) (6) (5) (8) (7) (6) (5)Packa
sp8k33fra.pdf
SP8K33FRASP8K33Transistors AEC-Q101 Qualified4V Drive Nch+Nch MOSFETSP8K33FRASP8K33 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Inner circuit(8) (7) (6) (5
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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