All MOSFET. CS4N65F_A9R Datasheet

 

CS4N65F_A9R MOSFET. Datasheet pdf. Equivalent

Type Designator: CS4N65F_A9R

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 53 pF

Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm

Package: TO220F

CS4N65F_A9R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS4N65F_A9R Datasheet (PDF)

1.1. cs4n65f a9r.pdf Size:263K _crhj

CS4N65F_A9R
CS4N65F_A9R

Silicon N-Channel Power MOSFET R ○ CS4N65F A9R General Description: VDSS 650 V CS4N65F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.1. jcs4n65f-c-r-v.pdf Size:779K _update

CS4N65F_A9R
CS4N65F_A9R

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N65C 封装 Package 主要参数 MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson(Vgs=10V) 2.5Ω 9nC Qg APPLICATIONS 用途 High frequency switching 高频开关电源 mode power supply 电子镇流器 Electronic ballast UPS 电源 UPS 产品特性 FEATURES 低栅极电荷

4.1. cs4n65 to-251 252.pdf Size:139K _can-sheng

CS4N65F_A9R
CS4N65F_A9R

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-251/TO-252 Plastic-Encapsulate Transistors 4N65 MOSFET(N-Channel) FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits

4.2. cs4n65 a4tdy.pdf Size:353K _crhj

CS4N65F_A9R
CS4N65F_A9R

Silicon N-Channel Power MOSFET R ○ CS4N65 A4TDY General Description: VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

4.3. cs4n65 a4r.pdf Size:226K _crhj

CS4N65F_A9R
CS4N65F_A9R

Silicon N-Channel Power MOSFET R ○ CS4N65 A4R General Description: VDSS 650 V CS4N65 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

4.4. cs4n65 a4hdy.pdf Size:596K _crhj

CS4N65F_A9R
CS4N65F_A9R

Silicon N-Channel Power MOSFET R ○ CS4N65 A4HDY General Description: VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

4.5. cs4n65 a3hdy.pdf Size:353K _crhj

CS4N65F_A9R
CS4N65F_A9R

Silicon N-Channel Power MOSFET R ○ CS4N65 A3HDY General Description: VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

4.6. cs4n65 a3hd.pdf Size:354K _crhj

CS4N65F_A9R
CS4N65F_A9R

Silicon N-Channel Power MOSFET ○ R CS4N65 A3HD General Description: VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

4.7. cs4n65 a3r.pdf Size:220K _crhj

CS4N65F_A9R
CS4N65F_A9R

Silicon N-Channel Power MOSFET R ○ CS4N65 A3R General Description: VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

4.8. cs4n65 a3tdy.pdf Size:237K _crhj

CS4N65F_A9R
CS4N65F_A9R

Silicon N-Channel Power MOSFET R ○ CS4N65 A3TDY General Description: VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

4.9. cs4n65 a8hd.pdf Size:345K _crhj

CS4N65F_A9R
CS4N65F_A9R

Silicon N-Channel Power MOSFET R ○ CS4N65 A8HD 0General Description: VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: CS4N65_A3HD , CS4N65_A3HDY , CS4N65_A3R , CS4N65_A3TDY , CS4N65_A4HDY , CS4N65_A4R , CS4N65_A4TDY , CS4N65_A8HD , IRF740 , CS4N70_A3D , CS4N70_A3HD-G , CS4N70_A4HD , CS4N70_ARHD , CS4N70F_A9D , CS4N80_A3HD , CS50N20_ANH , CS540_A3 .

 


CS4N65F_A9R
  CS4N65F_A9R
  CS4N65F_A9R
 

social 

LIST

Last Update

MOSFET: IRLL2703PBF | IRLL110TRPBF | IRLL024ZPBF | IRLL024NPBF | IRLL014PBF | IRLL014NPBF | IRLL3303PBF | IRLL2705PBF | IRF200B211 | IRF1902PBF | IRF1704 | IRF1607PBF | IRF150SMD | IRF150C | IRF150B |