CS5N20FA9 MOSFET Datasheet: N-Ch, 200V, 4.8A. Full specification with pinout and replacement list

CS5N20FA9 Specs and Replacement

Type Designator: CS5N20FA9

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO220F

CS5N20FA9 substitution

- MOSFET ⓘ Cross-Reference Search

CS5N20FA9 datasheet

7.1. Size:612K crhj
cs5n20f a9.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS5N20F A9 General Description VDSS 200 V CS5N20F A9, the silicon N-channel Enhanced ID 4.8 A PD (TC=25 ) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

8.1. Size:624K crhj
cs5n20 a3.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS5N20 A3 General Description VDSS 200 V CS5N20 A3, the silicon N-channel Enhanced ID 4.8 A PD (TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

8.2. Size:615K crhj
cs5n20 a4.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS5N20 A4 General Description VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A PD (TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

8.3. Size:739K wuxi china
cs5n20a4.pdf pdf_icon