All MOSFET. CS5N20FA9 Datasheet

 

CS5N20FA9 Datasheet and Replacement


   Type Designator: CS5N20FA9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F
 

 CS5N20FA9 substitution

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CS5N20FA9 Datasheet (PDF)

 7.1. Size:612K  crhj
 cs5n20f a9.pdf pdf_icon

CS5N20FA9

Silicon N-Channel Power MOSFET R CS5N20F A9 General Description VDSS 200 V CS5N20F A9, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.1. Size:624K  crhj
 cs5n20 a3.pdf pdf_icon

CS5N20FA9

Silicon N-Channel Power MOSFET R CS5N20 A3 General Description VDSS 200 V CS5N20 A3, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:615K  crhj
 cs5n20 a4.pdf pdf_icon

CS5N20FA9

Silicon N-Channel Power MOSFET R CS5N20 A4 General Description VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.3. Size:739K  wuxi china
 cs5n20a4.pdf pdf_icon

CS5N20FA9

Silicon N-Channel Power MOSFET R CS5N20 A4 General Description VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

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Datasheet: CS50N20ANH , CS540A3 , CS540A4 , IRLTS2242TR , CS540AR , VB1240 , CS5N20A3 , CS5N20A4 , AON6414A , NCE4688 , NCE3400A , NCE3404 , NCE40P05Y , CS16N65FA9H , SI9424DY-T1-E3 , SI9430DY-T1 , SI9433DY .

History: KU086N10P | IRLML9301 | STT4443 | WML08N80M3 | TPA60R160M | SSFM3008L | WMK08N60C4

Keywords - CS5N20FA9 MOSFET datasheet

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