All MOSFET. CS16N06AE-G Datasheet

 

CS16N06AE-G Datasheet and Replacement


   Type Designator: CS16N06AE-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95.7 nS
   Cossⓘ - Output Capacitance: 296 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOP8
 

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CS16N06AE-G Datasheet (PDF)

 ..1. Size:1706K  wuxi china
 cs16n06ae-g.pdf pdf_icon

CS16N06AE-G

Silicon N-Channel Power Trench MOSFET RCS16N06 AE-G General Description VDSS 60 V CS16N06 AE-G the silicon N-channel Enhanced ID Silicon limited current 16 A PD(TA=25) 3.1 W VDMOSFETs, is obtained by the high density Trench technology RDS(ON) Typ@Vgs=10V 6.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche ene

 9.1. Size:1203K  jilin sino
 jcs16n25vc jcs16n25rc jcs16n25cc.pdf pdf_icon

CS16N06AE-G

N RN-CHANNEL MOSFET JCS16N25C Package MAIN CHARACTERISTICS ID 16 A VDSS 250 V Rdson-max 0.30 @Vgs=10V Qg 9.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 9.2. Size:426K  crhj
 cs16n60 a8h.pdf pdf_icon

CS16N06AE-G

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 9.3. Size:306K  crhj
 cs16n60f a9h.pdf pdf_icon

CS16N06AE-G

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

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History: AON3611

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