CS16N06AE-G PDF and Equivalents Search

 ..1. Size:1706K  wuxi china
 cs16n06ae-g.pdf

Silicon N-Channel Power Trench MOSFET R CS16N06 AE-G General Description VDSS 60 V CS16N06 AE-G the silicon N-channel Enhanced ID Silicon limited current 16 A PD(TA=25 ) 3.1 W VDMOSFETs, is obtained by the high density Trench technology RDS(ON) Typ@Vgs=10V 6.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche ene... See More ⇒

 9.1. Size:1203K  jilin sino
 jcs16n25vc jcs16n25rc jcs16n25cc.pdf

N R N-CHANNEL MOSFET JCS16N25C Package MAIN CHARACTERISTICS ID 16 A VDSS 250 V Rdson-max 0.30 @Vgs=10V Qg 9.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒

 9.2. Size:426K  crhj
 cs16n60 a8h.pdf

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 9.3. Size:306K  crhj
 cs16n60f a9h.pdf

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various... See More ⇒

 9.4. Size:426K  wuxi china
 cs16n60a8h.pdf

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 9.5. Size:307K  wuxi china
 cs16n65fa9h.pdf

Silicon N-Channel Power MOSFET R CS16N65F A9H VDSS 650 V General Description ID 16 A CS16N65F A9H, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 9.6. Size:511K  convert
 cs16n65f cs16n65p cs16n65w.pdf

nvert CS16N65F,CS16N65P,CS16N65W Suzhou Convert Semiconductor Co ., Ltd. 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N65F TO-220F CS1... See More ⇒

 9.7. Size:776K  convert
 cs16n60f cs16n60p.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS16N60F,CS16N60P 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N60F TO-220F CS16N60F CS... See More ⇒

 9.8. Size:625K  convert
 cs16n65f.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS16N65F 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N65F TO-220F CS16N65F Absolute Max... See More ⇒