Справочник MOSFET. CS16N06AE-G

 

CS16N06AE-G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS16N06AE-G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 95.7 ns
   Cossⓘ - Выходная емкость: 296 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для CS16N06AE-G

 

 

CS16N06AE-G Datasheet (PDF)

 ..1. Size:1706K  wuxi china
 cs16n06ae-g.pdf

CS16N06AE-G CS16N06AE-G

Silicon N-Channel Power Trench MOSFET RCS16N06 AE-G General Description VDSS 60 V CS16N06 AE-G the silicon N-channel Enhanced ID Silicon limited current 16 A PD(TA=25) 3.1 W VDMOSFETs, is obtained by the high density Trench technology RDS(ON) Typ@Vgs=10V 6.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche ene

 9.1. Size:1203K  jilin sino
 jcs16n25vc jcs16n25rc jcs16n25cc.pdf

CS16N06AE-G CS16N06AE-G

N RN-CHANNEL MOSFET JCS16N25C Package MAIN CHARACTERISTICS ID 16 A VDSS 250 V Rdson-max 0.30 @Vgs=10V Qg 9.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 9.2. Size:426K  crhj
 cs16n60 a8h.pdf

CS16N06AE-G CS16N06AE-G

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 9.3. Size:306K  crhj
 cs16n60f a9h.pdf

CS16N06AE-G CS16N06AE-G

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 9.4. Size:426K  wuxi china
 cs16n60a8h.pdf

CS16N06AE-G CS16N06AE-G

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 9.5. Size:307K  wuxi china
 cs16n65fa9h.pdf

CS16N06AE-G CS16N06AE-G

Silicon N-Channel Power MOSFET RCS16N65F A9H VDSS 650 V General Description ID 16 A CS16N65F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.6. Size:511K  convert
 cs16n65f cs16n65p cs16n65w.pdf

CS16N06AE-G CS16N06AE-G

nvertCS16N65F,CS16N65P,CS16N65WSuzhou Convert Semiconductor Co ., Ltd.650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N65F TO-220F CS1

 9.7. Size:776K  convert
 cs16n60f cs16n60p.pdf

CS16N06AE-G CS16N06AE-G

nvertSuzhou Convert Semiconductor Co ., Ltd.CS16N60F,CS16N60P600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N60F TO-220F CS16N60FCS

 9.8. Size:625K  convert
 cs16n65f.pdf

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nvertSuzhou Convert Semiconductor Co ., Ltd. CS16N65F650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N65F TO-220F CS16N65FAbsolute Max

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History: FX30KMJ-03

 

 
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