RRQ030P03TR MOSFET Datasheet: P-Ch, 30V, 4A. Full specification with pinout and replacement list

RRQ030P03TR Specs and Replacement

Type Designator: RRQ030P03TR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TSOP6

RRQ030P03TR substitution

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RRQ030P03TR datasheet

..1. Size:834K cn vbsemi
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RRQ030P03TR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P... See More ⇒

5.1. Size:216K rohm
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4V Drive Pch MOSFET RRQ030P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) Low On-resistance. 0 0.1 2) High Power Package. (1) (2) (3) 1pin mark 3) High speed switching. 0.16 0.4 Each lead has same dimensions Abbreviated symbol UA Applications Equivalent circuit Switching (6) (5) ... See More ⇒

Detailed specifications: SI9433DY, SI9435BDY-T1-E3, SI9435DY-T1, CS60N04C4, NDT452AP-NL, CS16N06AE-G, CS12N06AE-G, RQK0301FG, IRF9540N, RRR040P03TL, RFD16N05LSM9A, CS6N60A3D, CS6N60A3HDY, SI2306DS-T1, SI2308DS-T1-GE3, CS6N60A4H, NTMS4177PR