CS6N60_A3HDY MOSFET. Datasheet pdf. Equivalent
Type Designator: CS6N60_A3HDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 95 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 98 pF
Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm
Package: TO251
CS6N60_A3HDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS6N60_A3HDY Datasheet (PDF)
1.1. cs6n60 a3d.pdf 
Size:353K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N60 A3D General Description： VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
1.2. cs6n60 a3ty.pdf Size:319K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N60 A3TY General Description： VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
1.3. cs6n60 a3hdy.pdf Size:230K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N60 A3HDY General Description： VDSS 600 V CS6N60 A3HDY, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
