CS6N60A3HDY - аналоги и даташиты транзистора

 

CS6N60A3HDY - Даташиты. Аналоги. Основные параметры


   Наименование производителя: CS6N60A3HDY
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 95 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 98 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.3 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для CS6N60A3HDY

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS6N60A3HDY Datasheet (PDF)

 6.1. Size:319K  wuxi china
 cs6n60a3ty.pdf pdf_icon

CS6N60A3HDY

Silicon N-Channel Power MOSFET R CS6N60 A3TY General Description VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 6.2. Size:231K  wuxi china
 cs6n60a3d.pdf pdf_icon

CS6N60A3HDY

Silicon N-Channel Power MOSFET R CS6N60 A3D General Description VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.1. Size:422K  wuxi china
 cs6n60a4ty.pdf pdf_icon

CS6N60A3HDY

Silicon N-Channel Power MOSFET R CS6N60 A4TY General Description VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:351K  wuxi china
 cs6n60a4d.pdf pdf_icon

CS6N60A3HDY

Silicon N-Channel Power MOSFET R CS6N60 A4D General Description VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NDT452AP-NL , CS16N06AE-G , CS12N06AE-G , RQK0301FG , RRQ030P03TR , RRR040P03TL , RFD16N05LSM9A , CS6N60A3D , SPP20N60C3 , SI2306DS-T1 , SI2308DS-T1-GE3 , CS6N60A4H , NTMS4177PR , CS6N60A7H , CS6N60A8H , CS6N60FA9H , CS6N60FA9H-G .

 

 
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