CS6N70A3D1-G Datasheet and Replacement
Type Designator: CS6N70A3D1-G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 6
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 84
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8
Ohm
Package: TO251L1
CS6N70A3D1-G substitution
-
MOSFET ⓘ Cross-Reference Search
CS6N70A3D1-G Datasheet (PDF)
5.1. Size:360K wuxi china
cs6n70a3d-g.pdf 
Silicon N-Channel Power MOSFET RCS6N70 A3D-G General Description VDSS 700 V CS6N70 A3D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.35 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
7.1. Size:357K wuxi china
cs6n70a4d-g.pdf
Silicon N-Channel Power MOSFET R CS6N70 A4D-G General Description VDSS 700 V CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
8.1. Size:1070K jilin sino
jcs6n70f.pdf
N RN-CHANNEL MOSFET JCS6N70C Package MAIN CHARACTERISTICS ID 6.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR
8.2. Size:1319K jilin sino
jcs6n70vc.pdf
N RN-CHANNEL MOSFET JCS6N70VC Package MAIN CHARACTERISTICS ID 6.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATU
8.4. Size:361K crhj
cs6n70f b9d.pdf
Silicon N-Channel Power MOSFET R CS6N70F B9D General Description VDSS 700 V CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.4 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
8.5. Size:238K crhj
cs6n70 a3d-g.pdf
Silicon N-Channel Power MOSFET R CS6N70 A3D-G General Description VDSS 700 V CS6N70 A3D-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
8.6. Size:727K crhj
cs6n70 a3h.pdf
Silicon N-Channel Power MOSFET R CS6N70 A3H General Description VDSS 700 V CS6N70 A3H,the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
8.7. Size:231K crhj
cs6n70 b3d1-g.pdf
Silicon N-Channel Power MOSFET R CS6N70 B3D1-G General Description VDSS 700 V CS6N70 B3D1-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
8.8. Size:357K crhj
cs6n70 a4d-g.pdf
Silicon N-Channel Power MOSFET R CS6N70 A4D-G General Description VDSS 700 V CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
8.9. Size:708K crhj
cs6n70f a9h.pdf
Silicon N-Channel Power MOSFET R CS6N70F A9H General Description VDSS 700 V CS6N70F A9H,the silicon N-channel Enhanced ID 6 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
8.10. Size:236K crhj
cs6n70 a3d1-g.pdf
Silicon N-Channel Power MOSFET RCS6N70 A3D1-G General Description VDSS 700 V CS6N70 A3D1-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
8.11. Size:225K crhj
cs6n70 crhd.pdf
Silicon N-Channel Power MOSFET R CS6N70 CRHD General Description VDSS 700 V CS6N70 CRHD, the silicon N-channel Enhanced ID 6 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
8.12. Size:234K crhj
cs6n70 a8d.pdf
Silicon N-Channel Power MOSFET R CS6N70 A8D General Description VDSS 700 V CS6N70 A8D, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25) 100 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.13. Size:233K crhj
cs6n70f a9d.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS6N70F A9D General Description VDSS 700 V CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can
8.14. Size:361K wuxi china
cs6n70fb9d.pdf
Silicon N-Channel Power MOSFET R CS6N70F B9D General Description VDSS 700 V CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.4 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
8.15. Size:348K wuxi china
cs6n70fa9d.pdf
Silicon N-Channel Power MOSFET R CS6N70F A9D General Description VDSS 700 V CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.35 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
8.16. Size:494K convert
cs6n70f cs6n70k cs6n70u cs6n70d.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS6N70F,CS6N70K,CS6N70U,CS6N70D700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N70F TO-220F
8.17. Size:463K convert
cs6n70cf cs6n70ck cs6n70cu cs6n70cd.pdf
CS6N70CF,CS6N70CK nvertSuzhou Convert Semiconductor Co ., Ltd.CS6N70CU,CS6N70CD700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N70CF
Datasheet: SI2308DS-T1-GE3
, CS6N60A4H
, NTMS4177PR
, CS6N60A7H
, CS6N60A8H
, CS6N60FA9H
, CS6N60FA9H-G
, UT3N06G-AE3
, IRF530
, SI4559EY
, CS6N70A3H
, SI4922BDY
, CS6N70A8D
, CS6N70B3D1-G
, CS6N70CRHD
, SI4946BEY-T1
, CS6N70FA9H
.
History: SSF11NS60D
Keywords - CS6N70A3D1-G MOSFET datasheet
CS6N70A3D1-G cross reference
CS6N70A3D1-G equivalent finder
CS6N70A3D1-G lookup
CS6N70A3D1-G substitution
CS6N70A3D1-G replacement
