SI4922BDY PDF and Equivalents Search

 

SI4922BDY Specs and Replacement


   Type Designator: SI4922BDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SO8
 

 SI4922BDY substitution

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SI4922BDY datasheet

 ..1. Size:179K  vishay
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SI4922BDY

Si4922BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.016 at VGS = 10 V 8 TrenchFET Power MOSFET 100 % Rg and UIS tested 30 0.018 at VGS = 4.5 V 8 19 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 2.5 V 8 D1 D2 SO-8 S D 1 ... See More ⇒

 ..2. Size:1480K  cn vbsemi
si4922bdy.pdf pdf_icon

SI4922BDY

SI4922BDY www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.016 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 7.6 APPLICATIONS Notebook System Power Low Current DC/DC D 1 D 2 SO... See More ⇒

 6.1. Size:246K  vishay
si4922bd.pdf pdf_icon

SI4922BDY

Si4922BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.016 at VGS = 10 V 8 TrenchFET Power MOSFET 100 % Rg and UIS tested 30 0.018 at VGS = 4.5 V 8 19 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 2.5 V 8 D1 D2 SO-8 S D 1 ... See More ⇒

 8.1. Size:56K  vishay
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SI4922BDY

Si4922DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 8.8 30 0.018 @ VGS = 4.5 V 8.3 0.024 @ VGS = 2.5 V 7.2 D1 D1 D2 D2 SO-8 S1 1 D1 8 G1 2 D1 7 G1 G2 S2 3 D2 6 G2 4 D2 5 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter... See More ⇒

Detailed specifications: CS6N60A7H , CS6N60A8H , CS6N60FA9H , CS6N60FA9H-G , UT3N06G-AE3 , CS6N70A3D1-G , SI4559EY , CS6N70A3H , IRF530 , CS6N70A8D , CS6N70B3D1-G , CS6N70CRHD , SI4946BEY-T1 , CS6N70FA9H , SMC3407S , CS6N80A0H , SI9945AEY-T1-E3 .

Keywords - SI4922BDY MOSFET specs

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