SI4922BDY MOSFET. Datasheet pdf. Equivalent

   Type Designator: SI4922BDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.5 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SO8

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SI4922BDY Datasheet (PDF)

..1. Size:179K vishay
si4922bdy.pdf pdf_icon

Si4922BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.016 at VGS = 10 V 8 TrenchFET Power MOSFET 100 % Rg and UIS tested30 0.018 at VGS = 4.5 V 8 19 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 2.5 V 8D1 D2SO-8 S D 1

..2. Size:1480K cn vbsemi
si4922bdy.pdf pdf_icon

SI4922BDYwww.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO

6.1. Size:246K vishay
si4922bd.pdf pdf_icon

8.1. Size:56K vishay
si4922dy.pdf pdf_icon

Si4922DYNew ProductVishay SiliconixDual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.016 @ VGS = 10 V 8.830 0.018 @ VGS = 4.5 V 8.30.024 @ VGS = 2.5 V 7.2D1 D1D2 D2SO-8S1 1 D18G1 2 D17G1G2S2 3 D26G2 4 D25Top ViewS1S2N-Channel MOSFETN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter

9.1. Size:240K vishay
si4925ddy.pdf pdf_icon

New ProductSi4925DDYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 8 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.041 at VGS = - 4.5 V - 8APPLICATIONS Load Switches- Notebook PCs- Desktop PCs- Game StationsS1 S2SO-

9.2. Size:237K vishay
si4925dd.pdf pdf_icon

9.3. Size:243K vishay
si4923dy.pdf pdf_icon

Si4923DYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.021 at VGS = - 10 V - 8.3 TrenchFET Power MOSFET- 300.031 at VGS = - 4.5 V - 6.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switches- Notebook PCs- Desktop PCs- Game St

9.4. Size:246K vishay
si4925bdy.pdf pdf_icon

Si4925BDYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = - 10 V - 7.1 TrenchFET Power MOSFET- 300.041 at VGS = - 4.5 V - 5.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switches- Notebook PCs- Desktop PCs- Game S

9.5. Size:65K vishay
si4924dy.pdf pdf_icon

Si4924DYVishay SiliconixAsymetrical Dual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.022 @ VGS = 10 V 6.3Channel 1Channel-10.030 @ VGS = 4.5 V 5.430300.0105 @ VGS = 10 V 11.5Channel 2Channel-20.0145 @ VGS = 4.5 V 10D1 D2 D2 D2SO-8S1 1 D18G1 2 D27S2 3 D26G1 G2G2 4 D25Top ViewS1 S2Ordering Information: Si4924DYN-C

9.6. Size:72K vishay
si4925dy.pdf pdf_icon

Si4925DYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARY FEATURESD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)Pb-free0.032 @ VGS = -10 V -6.3Available-30300.045 @ VGS = -4.5 V -5.3SO-8S1 S2S1 1 D18G1 2 D17S2 3 D26 G1 G2G2 4 D25Top ViewD1 D2Ordering Information: Si4925DYSi4925DY-T1 (with Tape and Reel)P-Channel MOSFET P-Cha

9.7. Size:216K vishay
si4920dy.pdf pdf_icon

Si4920DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 10 V 6.9 TrenchFET Power MOSFETs 300.035 at VGS = 4.5 V 5.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECD1 D2SO-8S1 1 D18G1 2 D17S2 3 D26G1 G2

9.8. Size:118K vishay
si4926dy.pdf pdf_icon

Si4926DYNew ProductVishay SiliconixAsymmetrical Dual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.022 @ VGS = 10 V 6.3Channel-1Channel-10.030 @ VGS = 4.5 V 5.43030300.0125 @ VGS = 10 V 10.5Channel-2Channel-20.017 @ VGS = 4.5 V 9.0D1 D2 D2 D2SO-8S1 1 D18G1 2 D27G1 G2S2 3 D26G2 4 D25S1 S2Top ViewN-Channel 1 N-Cha

9.9. Size:58K vishay
si4927dy.pdf pdf_icon

Si4927DYVishay SiliconixP-Channel 30-V (D-S) Battery SwitchPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.028 @ VGS = 10 V "7.430300.045 @ VGS = 4.5 V "5.8S1 S2SO-8S1 1 D8G1 G2G1 2 D7S2 3 D6G2 4 D5Top ViewD1 D1 D2 D2P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrai

9.10. Size:89K vishay
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9.11. Size:909K cn vbsemi
si4920dy-t1.pdf pdf_icon

SI4920DY-T1www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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SI4922BDY MOSFET. Datasheet pdf. Equivalent

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